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Extreme asymmetric X-ray Bragg reflection of semiconductor heterostructures near the edge of total external reflection

✍ Scribed by Brühl, H. G. ;Baumbach, T. ;Gottschalch, V. ;Pietsch, U. ;Lengeler, B.

Book ID
114500345
Publisher
International Union of Crystallography
Year
1990
Tongue
English
Weight
609 KB
Volume
23
Category
Article
ISSN
0021-8898

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A review of the applications of total reflection x-ray photoelectron spectroscopy (TRXPS) to the semiconductor surface are described. When the grazing angle of incident x-rays is below the critical angle of x-ray total reflection, the penetration depth of the x-rays into the material is strongly att