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Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating

✍ Scribed by Kimura, Mutsumi; Inoue, Satoshi; Shimoda, Tatsuya; Tam, Simon W.-B.; Lui, O. K. Basil; Migliorato, Piero; Nozawa, Ryoichi

Book ID
120441887
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
305 KB
Volume
91
Category
Article
ISSN
0021-8979

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πŸ“œ SIMILAR VOLUMES

Evaluation of trap states at front and b
Evaluation of trap states at front and back oxide interfaces and grain boundaries using electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistors
✍ Mutsumi Kimura πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 756 KB

## Abstract The trap states at the front and back oxide interfaces and grain boundaries of polycrystalline silicon thin‐film transistors are evaluated by using electrical characteristic analysis and device simulation. First, the method for extracting the trap densities of the front and back oxide i