## Abstract This article presents accurate measurement‐based models derived from measured S‐parameters of passive circuit elements which include inductors, thin‐film resistors, interdigital and MIM capacitors, via holes, and airbridges for use in the computer‐aided design of monolithic microwave in
Extraction of CAD-compatible statistical nonlinear models of GaAs HEMT MMICs
✍ Scribed by Francesco Centurelli; Alberto Di Martino; Giuseppe Scotti; Pasquale Tommasino; Alessandro Trifiletti
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 240 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this article, a statistical nonlinear model of GaAs HEMT MMICs based on standard CAD library models is presented. A previously developed extraction procedure is used to determine model parameters. Extraction and CAD implementation of the model in 1–50 GHz frequency range provide validation of both the statistical model and the extraction procedure. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2163–2166, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24543
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