✦ LIBER ✦

External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication

✍ Scribed by Ching-Fuh Lin; Yi-Shin Su; Bing-Ruey Wu

Book ID: 119788786
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 49 KB
Volume: 14
Category: Article
ISSN: 1041-1135
DOI: 10.1109/68.974142

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Widely tunable 1.55-μm lasers for wavele

Widely tunable 1.55-μm lasers for wavelength-division-multiplexed optical fiber communications

✍ Delorme, F. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 260 KB

Nonlinear gain and the spectral output o

Nonlinear gain and the spectral output of short-external-cavity 1.3 μm InGaAsP semiconductor diode lasers

✍ Hayward, J.E.; Cassidy, D.T. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 876 KB

Diode lasers at 1.0 to 1.3 µm for o

Diode lasers at 1.0 to 1.3 µm for optical fiber communications

✍ Melngailis, I. 📂 Article 📅 1977 🏛 IEEE 🌐 English ⚖ 372 KB

Undercut ridge structures: a novel appro

Undercut ridge structures: a novel approach to 1.3/1.55 μm vertical-cavity lasers designed for continuous-wave operation

✍ Salet, P.; Plais, A.; Derouin, E.; Fortin, C.; Starck, C.; Jacquet, J.; Brilloue 📂 Article 📅 1998 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 810 KB

Optimisation of GaAs-based (GaIn)(NAs)//

Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-μm optical-fibre communication systems

✍ Sarzala, R.P.; Nakwaski, W. 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 336 KB

Numerical study on gain and optical prop

Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers

✍ Yen-Kuang Kuo; Sheng-Horng Yen; Ming-Wei Yao; Mei-Ling Chen; Bo-Ting Liou 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 304 KB