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Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes

✍ Scribed by N.A. Sobolev; A.M. Emel’yanov; E.I. Shek; V.I. Vdovin


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
205 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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The influence of the p-n junction breakdown mechanism on the Er 3+ electroluminescence (EL) intensity and excitation efficiency (an intra 4f transition 4 I 13/2 → 4 I 15/2 of Er 3+ ion at the wavelength of 1.54 m) has been investigated in Si:Er light emitting diodes (LED) grown with sublimation mole