Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

✍ Scribed by Vianello, E.; Driussi, F.; Blaise, P.; Palestri, P.; Esseni, D.; Perniola, L.; Molas, G.; De Salvo, B.; Selmi, L.

• Book ID: 114620547
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 699 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2156407