Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations

✍ Scribed by Vianello, E.; Driussi, F.; Perniola, L.; Molas, G.; Colonna, J.-P.; De Salvo, B.; Selmi, L.

• Book ID: 114620479
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 576 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2140116