Theoretical and experimental considerati
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A Bournel; V Delmouly; P Dollfus; G Tremblay; P Hesto
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Article
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2001
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Elsevier Science
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English
β 97 KB
We propose a study of the spin ΓΏeld e ect transistor (spin-FET), as a structure for the investigation of the physics of spin polarized transport in ferromagnet=semiconductor structures and as a device for fast electronics. From Monte Carlo simulation of spin-polarized transport in the channel of thi