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Experimental application of a novel technique to extract gate bias dependent source and drain parasitic resistances of GaAs MESFETs

✍ Scribed by Roberto Menozzi; Paolo Cova; Luca Selmi

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 191 KB
Volume: 36
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(93)90127-c

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Gate-voltage dependence of source and dr

Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs : Y H BYUN, M S SHUR (Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA), A PECALSKI, F L SCHUERMEYER IEEE Trans. Electron. Devices (USA), vol. 35, no. 8, pp. 1241–1246 (Aug. 1988)

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 104 KB