Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

✍ Scribed by Verzellesi, G.; Mazzanti, A.; Basile, A.F.; Boni, A.; Zanoni, E.; Canali, C.

• Book ID: 114617171
• Publisher: IEEE
• Year: 2003
• Tongue: English
• Weight: 686 KB
• Volume: 50
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.815134