Existence of3He-vacancy bound states in4He crystals

✍ Scribed by Douglas P. Locke; Richard A. Young

• Publisher: Springer US
• Year: 1976
• Tongue: English
• Weight: 360 KB
• Volume: 23
• Category: Article
• ISSN: 0022-2291
• DOI: 10.1007/bf00117250

✦ Synopsis

Bound states and scattering resonances for a 3He-vacancy system in crystalline 4He are shown to exist. For realistic physical parameters the theory yields binding energies of ~ O. 1 K. It is found that the bound states and scattering resonances tend to enhance the diffusion coefficient of 3He. The experimental consequences of this enhanced diffusion are discussed.

The terms describe vacancy hopping, 3He-4He exchange, and 3He-vacancy exchange, respectively. In our approximation ~ t, m, b, nearest neighbors Tij, M ij, Bij = ( 0, otherwise *The strain field of the 3He is expected to be much smaller than that of the vacancy so that this cancellation will not be the dominant effect in generating a bound state. See Refi 2.