## Abstract This document shows that new electrically active defects can develop in the homoepitaxial layer grown on Ib diamond substrates, related to the increase of the dislocation density. Deep centres, which are able to compensate the boron acceptors, specially when the growth process allows bo
Excitons and defects in homoepitaxial diamond films from cathodoluminescence of p–/p+ samples
✍ Scribed by Wade, M. ;Kadri, M. ;Bustarret, E. ;Deneuville, A. ;Muret, P. ;Araujo, D.
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 216 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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## Abstract In the present study homoepitaxial diamond films have been grown by microwave plasma chemical vapour deposition (MWPCVD) on (001)‐oriented Ib HPHT substrates with off‐axis angles of up to 11°. Freestanding films of several hundred microns thickness were produced by removal of the Ib sub
Several kinds of (100) surfaces of homoepitaxial diamond films doped with boron are investigated. The valence band maximum at the surface and electronic affinity are measured using ultraviolet and X-ray photoelectron spectroscopies. In p-type doped films, resistivity measurements indicate that the b