Excitonic recombination processes in GaAs grown by close-space vapour transport

✍ Scribed by L Bouzrara; R Ajjel; H Mejri; M.A Zaidi; S Alaya; J Mimila-Arroyo; H Maaref

• Book ID: 104050874
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 103 KB
• Volume: 35
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2004.03.002

✦ Synopsis

Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been observed in all of the layers with deposition temperature-dependent concentration. On the GaAs samples, also performed are photoluminescence experiments in the temperature range 10 -300 K. Two peculiar features were revealed: (i) the radiative recombination in GaAs layers is increasingly dominated by bound-exciton transitions, (ii) the excitonic luminescence is found to be very sensitive to the growth conditions. A study of the near-band-edge photoluminescence as a function of power excitation and temperature has been done in an attempt to elucidate the origin of the enhanced bound-exciton luminescence.