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Hole traps in n-type epitaxial GaAs layers grown by the close-spaced vapor transport technique

✍ Scribed by T. Bretagnon; A. Jean; G. Arnaud; G. Bastide


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
286 KB
Volume
74
Category
Article
ISSN
0038-1098

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