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Exciton transport by moving strain dots in GaAs quantum wells

✍ Scribed by S. Lazić; P.V. Santos; R. Hey


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
510 KB
Volume
42
Category
Article
ISSN
1386-9477

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We present the results of optical, steady-state and time-resolved studies of photoluminescence and photoluminescence excitation in high-quality Al 0.3 Ga 0.7 As/GaAs quantum wells in which the presence of large (larger than the exciton radius) atomically flat islands can be inferred, identical to th