The excitonic properties of InGaAs/InP multi-quantum-well systems grown by chemical beam epitaxy have been investigated with absorption measurements in the temperature range 8-300 K and in the spectral region 0.775-1.550 eV. In this region, the excitonic resonances corresponding to n = 1, n = 2 inte
Exciton transitions in InGaAs/InP quantum wells investigated by photocurrent spectroscopy
β Scribed by C. Arena; A. Satka; L. Tarricone
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 441 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0921-5107
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This paper reports the results of a study on interfacial quality and thermal interdiffusion for InP/InGaAs Quantum Wells [QW) grown by hydride VPE. By controlling well layer as thin as 25A, it was estimated that island and valley, whose height was one monolayer and whose lateral size was one third o
Interband optical transit,ions of Ino.53Gao.\*7As/Ino.s2Alo.48As multi-quantum wells have been clearly observed in photocurrent spectra. Interband transitions were assigned from the spectral structures. Eigen-energies of conduction band were not proportional to the square of quantum numbers. An ele