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Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities

✍ Scribed by Kirilyuk, V.; Zauner, A. R. A.; Christianen, P. C. M.; Weyher, J. L.; Hageman, P. R.; Larsen, P. K.


Book ID
118057357
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
380 KB
Volume
76
Category
Article
ISSN
0003-6951

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For the first time, we observed exciton dead layers in Pt/GaN Schottky diodes with N and Ga-face polarity. We show that these layers determine the shape of electroreflectance and photocurrent spectra close to the band gap in dependence on the bias voltage. Analysis of experimental data using a spati