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Exciton localization and quantum efficiencyâA comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells

✍ Scribed by Jahn, U.; Dhar, S.; Brandt, O.; Grahn, H. T.; Ploog, K. H.; Watson, I. M.

Book ID: 120651947
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 522 KB
Volume: 93
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1529993

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## Abstract The paper reports on the influence of the growth temperature on the structural and chemical properties of (In,Ga)N quantum wells (QWs) on GaN. Two different samples A and B were fabricated. The QWs of the sample A were grown at a constant temperature of 600 °C. For the QWs of the sample

Exciton localization and quantum efficiencyâA comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells

Exciton localization and quantum efficiencyâA comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells