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Exciton photoluminescence in doped quasi-1D structures based on silicon

✍ Scribed by A. V. Sachenko; D. V. Korbutyak; Yu. V. Kryuchenko; O. M. Sreseli


Book ID
110138675
Publisher
Springer
Year
2004
Tongue
English
Weight
100 KB
Volume
38
Category
Article
ISSN
1063-7826

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The numerical investigation of photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) of silicon doped with germanium (n-Si x Ge 1Γ€x ) and silicon-on-insulator (SOI) structures has been illustrated. The effect of germanium-doping (Ge-doping) concentration on the vertical confin