Exciton linewidth due to scattering from free carriers in semiconducting quantum well structures

✍ Scribed by Yuan-ping Feng; Harold N. Spector

• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 222 KB
• Volume: 3
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(87)90223-0

✦ Synopsis

The contribution to the exciton linewidth in semiconducting quantum well structures due to the scattering of excitons by iree carriers is calculated. It is found that this contribution becomes very important in IImiting the exciton linewidth when a high density of free carriers is present or at low temperatures where the scattering of the excitons by optical and acoustic phonons is reduced. This contribution to the linewidth in quantum well structures is found to increase with the free carrier concentration and to extremely broaden the exciton peak at high carrier concentrations. At lower carrier concentrations, where the carriers behave as a nondegenerate gas of particles, the contribution to the exciton linewidth due to scattering by free carriers increases with temperature.