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Exciton lifetimes in GaN and GaInN

✍ Scribed by Harris, C. I.; Monemar, B.; Amano, H.; Akasaki, I.


Book ID
117990822
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
290 KB
Volume
67
Category
Article
ISSN
0003-6951

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AlGaN/GaInN/GaN heterostructure field-ef
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## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,