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Exciton formation and stability in semiconductor heterostructures

โœ Scribed by Siggelkow, S.; Hoyer, W.; Kira, M.; Koch, S.

Book ID
115534842
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
171 KB
Volume
69
Category
Article
ISSN
1098-0121

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Exciton luminescence polarization decay
Exciton luminescence polarization decay in type II semiconductor heterostructures
โœ Erasmo A.de Andrada e Silva; Giuseppe C.La Rocca ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 70 KB

In type II semiconductor heterostructures, one can reduce the electron-hole overlap, without changing much the oscillator strength, so that the space indirect exciton luminescence polarization will decay according to the exciton-bound single-particle spin ip. The exciton spin relaxation rate is then