Exciton luminescence polarization decay in type II semiconductor heterostructures

✍ Scribed by Erasmo A.de Andrada e Silva; Giuseppe C.La Rocca

• Book ID: 104429212
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 70 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00171-4

✦ Synopsis

In type II semiconductor heterostructures, one can reduce the electron-hole overlap, without changing much the oscillator strength, so that the space indirect exciton luminescence polarization will decay according to the exciton-bound single-particle spin ip. The exciton spin relaxation rate is then limited by the slower single-particle spin-ip rate which is typically the electron one. We discuss the microscopic theory of the exciton-bound electron spin relaxation driven by the spin-orbit k 3 e splitting in the conduction band. The exciton-bound electron spin relaxation rate (We) is obtained as a function of the material and structure parameters. The exciton luminescence polarization decay rate in AlSb=GaSb=AlSb=InAs=AlSb heterostructures, where space indirect excitons can be created and controled, is estimated. The InAs electron well width L e dependence is also discussed.