𝔖 Bobbio Scriptorium

✦ LIBER ✦

Excited 1s levels of Bi donors in Si : W. E. Krag, W. H. Kleiner and H. J. Zeiger. Proc. 10th International Conf. on the Physics of Semiconductors (CONF-700801). Massachusetts Institute of Technology, Cambridge, Mass., U.S.A., 17–21 August (1970)

Publisher: Elsevier Science
Year: 1971
Tongue: English
Weight: 112 KB
Volume: 10
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(71)90272-1

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📜 SIMILAR VOLUMES

Electronic properties of amorphous semic

Electronic properties of amorphous semiconductors : J. Stuke. Proc. 10th. International Conf. on the Physics of Semiconductors. (CONF-700801), Massachusetts Institute of Technology Cambridge, Mass., U.S.A., 17–21 August (1970)

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Covalent bonds in semiconductors : J. C.

Covalent bonds in semiconductors : J. C. Phillips, Proc. 10th International Conf. on the Physics of Semiconductors (CONF-700801). Massachusetts Institute of Technology, Cambridge, Mass., USA, 17–21 August (1970)

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Negative differential conductivity in se

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Shallow acceptor states in semiconductor

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A detailed analysis of three-level elect

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Photomodulation of the photoemissive yie

Photomodulation of the photoemissive yield near threshold in silicon : J. E. Rowe, Proc. 10th International Conf. on the Physics of Semiconductors (CONF-700801). Massachusetts Institute of Technology, Cambridge, Mass., USA, 17–21 August (1970)

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