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Photomodulation of the photoemissive yield near threshold in silicon : J. E. Rowe, Proc. 10th International Conf. on the Physics of Semiconductors (CONF-700801). Massachusetts Institute of Technology, Cambridge, Mass., USA, 17–21 August (1970)

Publisher: Elsevier Science
Year: 1971
Tongue: English
Weight: 116 KB
Volume: 10
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(71)90465-3

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