Excitation spectra of terahertz emission from semiconductor surfaces

✍ Scribed by R. Adomavičius; G. Molis; A. Krotkus; V. Sirutkaitis

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 106 KB
• Volume: 30
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2007.02.038

✦ Synopsis

Spectral dependences of THz radiation from laser-illuminated surfaces of InAs and InSb have been investigated experimentally at high optical fluences for laser wavelengths ranging from 0.6 lm to 2 lm. Efficient THz generation was discovered in the excitation range around 1.6 lm. The influence of inter-valley scattering was evident. The energy position of subsidiary conduction band valleys was evaluated to be equal to 1.08 eV and 0.53 eV for InAs and InSb, respectively.