Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures
✍ Scribed by I.N. Yassievich; A.S. Moskalenko
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 102 KB
- Volume
- 105
- Category
- Article
- ISSN
- 0921-5107
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There are some evidences that Er related optically active centers in silicon form donors with binding energy about 150-250 meV, and the excitation of erbium occurs in a result of Auger recombination process of the electron bound to the donor and a free hole or bound exciton. It is supposed that ther
## Abstract Hydrogenated amorphous and nanocrystalline silicon thin films deposited by hot wire (HW) and radio‐frequency plasma‐enhanced chemical vapour deposition (RF‐PECVD) were erbium‐implanted. Their pre‐implantation structural properties and post‐implantation optical properties were studied an