Exchange-correlation energy in the subbands of silicon doping superlattices

✍ Scribed by K.H. Teo; G.H. McKinnon; J.N. McMullin; H.G. Schmidt-Weinmar

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 362 KB
• Volume: 4
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(88)90165-6

✦ Synopsis

The energy subbands in three types (pn+p, pnpn, nipi) of Si and GaAs doping super-lattices are calculated self-consistently including the exchangecorrelation energy given by the density functional method.

The results show that the exchange-correlation term is more important in Si than in GaAs in all three cases. For the same doping levels, layer thicknesses and electron concentrations, the shift in the lowest subband energy from the value given by the Hartree Approximation is 20-50% greater in Si than in GaAs.