Examination of the effect of pressure on the electronic structure of U3X4 compounds (X = P, As, Sb)

✍ Scribed by Z. Henkie; R. Maślanka; K. Durczewski

• Publisher: Elsevier Science
• Year: 1986
• Weight: 440 KB
• Volume: 144
• Category: Article
• ISSN: 0378-4363
• DOI: 10.1016/0378-4363(86)90300-1

✦ Synopsis

The effect of an external hydrostatic pressure on the electronic structure of the semimetallic and ferromagnetic U3X 4 compounds (X ---P, As, Sb) has been examined by studying its influence both on the behaviour of the electrical resistivity in the vicinity of the Curie temperature and the thermopower sign inversion temperature. The results show that the applied pressures cause a rather small mutual shift of the conduction and valence bands ~6.4 meV/GPa for U3P 4, --2.6 meV/GPa for U3As4 and -1.1 meV/GPa for U3Sb 4. The shift is accompanied by a variation of the effective mass stronger than in the case when the interatomic distances are changed by the pnictogen substitution.