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Examination of pressure effect on the electronic structure of p-type Th3As4 by compensation point method

✍ Scribed by Z. Henkie; R. Maślanka; P.J. Markowski; J. Wierzbicki

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
358 KB
Volume
59
Category
Article
ISSN
0038-1098

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Examination of the effect of pressure on
Examination of the effect of pressure on the electronic structure of U3X4 compounds (X = P, As, Sb)
✍ Z. Henkie; R. Maślanka; K. Durczewski 📂 Article 📅 1986 🏛 Elsevier Science ⚖ 440 KB

The effect of an external hydrostatic pressure on the electronic structure of the semimetallic and ferromagnetic U3X 4 compounds (X ---P, As, Sb) has been examined by studying its influence both on the behaviour of the electrical resistivity in the vicinity of the Curie temperature and the thermopow