✦ LIBER ✦

Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

✍ Scribed by Seo, Soo Hyung; Song, Joon Suk; Oh, Myung Hwan; Wang, Yen Zen

Book ID: 121017017
Publisher: Trans Tech Publications, Ltd.
Year: 2005
Tongue: English
Weight: 506 KB
Volume: 483-485
Category: Article
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/MSF.483-485.43

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Observation of polytype stability in dif

Observation of polytype stability in different-impurities-doped 6H–SiC crystals

✍ Lin, Shenghuang; Chen, Zhiming; Feng, Xianfeng; Yang, Ying; Li, Lianbi; Wang, Zh 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 604 KB

Growth of 6H-SiC Single Crystals under Q

Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions

✍ Tymicki, Emil; Grasza, Krzysztof; Hofman, Władysław; Diduszko, Ryszard; Bożek, R 📂 Article 📅 2008 🏛 Trans Tech Publications, Ltd. 🌐 English ⚖ 726 KB

Dislocation evolution and distribution d

Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals

✍ S. A. Sakwe; R. Müller; P. Masri; P. J. Wellmann 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 265 KB

Growth of Ba-hexaferrite films on single

Growth of Ba-hexaferrite films on single crystal 6-H SiC

✍ Zhoahui Chen; Aria Yang; S.D. Yoon; Katherine Ziemer; Carmine Vittoria; V.G. Har 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 157 KB

Bulk crystal growth of 6H-SiC on polytyp

Bulk crystal growth of 6H-SiC on polytype-controlled substrates through vapor phase and characterization

✍ Woo Sik Yoo; Atsushi Yamashita; Tsunenobu Kimoto; Hiroyuki Matsunami 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 750 KB

Factors affecting the formation of misor

Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method

✍ T. H. Peng; H. Yang; J. K. Jian; W. J. Wang; W. Y. Wang; X. L. Chen 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 160 KB 👁 1 views

## Abstract Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found