Evolution of crystal structure of Zn:N films under high temperature

✍ Scribed by C. Chityuttakan; K. Wantong; S. Chatraphorn; K. Yoodee

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 149 KB
• Volume: 45
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000260

✦ Synopsis

Abstract

Zinc‐nitrogen (Zn:N) compound thin film was prepared from a pure metallic Zn target by rf magnetron sputtering at ambient temperature under the mixture of nitrogen and argon gases with the ratio of 1:1. High temperature x‐ray diffraction (HTXRD) measurement under vacuum was used to examine the evolution of structural properties of the Zn:N film. At ambient temperature, the (002), (100), and (101) planes corresponding to Zn structure were observed while at higher temperature, the left shifts corresponding to the increase of lattice constants a and c of Zn were observed. At temperatures of 320 °C, 481 °C and 554 °C, the (222), (321) and (400) planes corresponding to Zn~3~N~2~ structure were observed with the decrease in the intensity amplitudes of the peaks belonging to the Zn structure. The results indicate the gradual transformation of the Zn~3~N~2~ phase in the Zn:N films at temperature greater than 320 °C. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)