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Evidence for sequential tunnelling and charge build-up in double barrier resonant tunnelling devices

✍ Scribed by C.A. Payling; E.S. Alves; L. Eaves; T.J. Foster; M. Henini; O.H. Hughes; P.E. Simmonds; F.W. Sheard; G.A. Toombs; J.C. Portal

Book ID
118362462
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
448 KB
Volume
196
Category
Article
ISSN
0039-6028

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Magneto-tunneling studies of charge buil
Magneto-tunneling studies of charge build-up in double barrier diodes
✍ D. Thomas; F. Chevoir; P. Bois; E. Barbier; Y. Guldner; J.P. Vieren πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 345 KB

The accumulation and depletion layers on each side of a Double Barrier Diode (DBD) are believed to have an important influence on DC and high frequency behaviour of such devices. A magnetic field (B] parallel to the growth axis induces Landau quantization in the structure. Very large current oscilla