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Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique

✍ Scribed by Giacomo Barletta; Giuseppe Currò

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A simple technique for the separation of

✍ Gaubas, E.; Vanhellemont, J. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 363 KB

Transient isothermal generation at the s

✍ J.G. Simmons; H.A. Mar 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 476 KB

Investigations of gold surface state ene

✍ G.R. Moghal 📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 794 KB

Uniform mechanism of Fermi-level pinning

✍ R.J. Iwanowski 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 340 KB

Mechanisms of generation of transient in

✍ Xinqiang Han; Gregory R. Ferrier 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 117 KB

Evaluation of the diffusion length in si

✍ E Vittone; F Fizzotti; E Gargioni; R Lu; P Polesello; A LoGiudice; C Manfredotti 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 199 KB