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Evaluation of Optical Confinement in GaN-Based Lasing Structures

✍ Scribed by S. Bidnyk; T.J. Schmidt; J.J. Song

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
143 KB
Volume
216
Category
Article
ISSN
0370-1972

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✦ Synopsis

We present a technique for evaluating optical confinement in GaN-based lasing structures through their spectrally resolved near-field pattern under high optical excitation. Emission spectra were found to be strongly dependent on the position of collection optics relative to the active region when the sample was excited above the lasing threshold. The spatially resolved spectra contain a modulation signature that can be used to deduce the optical confinement characteristics. We show that the observed index-guided modes resulted from multiple internal reflections very near the critical angle of total internal reflection between the semiconductor layers with different refractive indices. This technique was used to evaluate the degree of optical confinement in GaN epilayers and GaN/AlGaN separate confinement heterostructure. The implications of this study on the design of GaN-based laser diodes is discussed.

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