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Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model

✍ Scribed by Funaki, Tsuyoshi; Kimoto, Tsunenobu; Hikihara, Takashi

Book ID: 121221738
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 925 KB
Volume: 23
Category: Article
ISSN: 0885-8993
DOI: 10.1109/TPEL.2008.2002096

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