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Eu-doped (Lu/Sc)2O3 thin films grown by thermal evaporation

✍ Scribed by L. Rabisch; S. Bär; H. Scheife


Book ID
108233998
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
488 KB
Volume
28
Category
Article
ISSN
0925-3467

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✍ Yongshik Kim; Kunihiro Miyauchi; Shun-ichiro Ohmi; Kazuo Tsutsui; Hiroshi Iwai 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 246 KB

In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)