## Abstract Singleโcrystalline GaN layers with a thickness up to 330 ยตm were grown by hydride vapor phase epitaxy on basal plane sapphire at gallium stable conditions in a bottomโfed vertical reactor at atmospheric pressure. Positron annihilation spectroscopy experiments were implemented in order t
Etching, Raman and PL study of thick HVPE-grown GaN
โ Scribed by J.L. Weyher; R. Lewandowska; L. Macht; B. Lucznik; I. Grzegory
- Book ID
- 103846461
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 355 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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