𝔖 Bobbio Scriptorium
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Etching of silicon carbide for device fabrication and through via-hole formation

✍ Scribed by F. A. Khan; B. Roof; L. Zhou; I. Adesida


Book ID
107452596
Publisher
Springer US
Year
2001
Tongue
English
Weight
800 KB
Volume
30
Category
Article
ISSN
0361-5235

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An important advantage of silicon carbide as a material for power electronics is its extremely high electric field strength. The practical use of this advantage requires the elimination of regions of high electric field concentration in the design of power devices and efficient device passivation. L