Etchant composition effects on porous silicon morphology and photoluminescence
โ Scribed by Koker, L. ;Wellner, A. ;Sherratt, P. A. J. ;Neuendorf, R. ;Kolasinski, K. W.
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 282 KB
- Volume
- 197
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Stain etching of silicon in aqueous solutions composed of FeCl~3~ + HF + concentrated (HClO~4~ or H~2~SO~4~) leads to highly luminescent porous Si with a unique dual layer structure. The upper layer (โผ3 ฮผm thick) exhibits bluer luminescence (peaked at 560โ590 nm) and a porosity in exces
The morphological di โ erences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structur