Etch rate behaviour of SiO2 films chemically vapour deposited from silane, oxygen and nitrogen gas mixtures at low temperatures

✍ Scribed by C. Pavelescu; C. Cobianu; L. Condriuc; E. Segal

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 249 KB
• Volume: 114
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(84)90126-3