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ESR signature of tetra-interstitial defect in silicon

✍ Scribed by T. Mchedlidze; I. Yonenaga; M. Suezawa

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
222 KB
Volume
6
Category
Article
ISSN
1369-8001

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## Abstract Mobile single interstitials can grow into extended interstitial defect structures during thermal anneals following ion implantation. The silicon tetra‐interstitials present an important intermediate structure that can either provide a chain‐like nucleation site for extended structures o