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ESR and electrical properties of P-doped microcrystalline Si

โœ Scribed by Hasegawa, S.; Narikawa, S.; Kurata, Y.


Book ID
119998889
Publisher
Taylor and Francis Group
Year
1983
Tongue
English
Weight
911 KB
Volume
48
Category
Article
ISSN
1364-2812

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Electrical Properties of the Si Implanta
โœ Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 122 KB ๐Ÿ‘ 2 views

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100