In this article, a broadband approach to high-efficiency power amplifier performance, based on the parallel-circuit Class E mode, is discussed. Results for a practical implementation of multi-band and multi-mode handset power amplifiers are shown. Measurements demonstrate the feasibility of the conc
β¦ LIBER β¦
ESD protection design considerations for InGaP/GaAs HBT RF power amplifiers
β Scribed by Ma, Y.; Li, G.P.
- Book ID
- 114660154
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 490 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0018-9480
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