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Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)]

✍ Scribed by N. I. Katsavets; G. M. Laws; I. Harrison; E. C. Larkins; T. M. Benson; T. S. Cheng; C. T. Foxon

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