Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]

✍ Scribed by N. I. Katsavets; G. M. Laws; I. Harrison; E. C. Larkins; T. M. Benson; T. S. Cheng; C. T. Foxon

• Book ID: 110119982
• Publisher: Springer
• Year: 1998
• Tongue: English
• Weight: 20 KB
• Volume: 32
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1187604