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Erosion of the GaAs target under irradiation by a high-power pulsed ion beam

✍ Scribed by Li Tszen’ Fen’; G. E. Remnev; M. S. Saltymakov; V. I. Gusel’nikov; V. A. Makeev; I. V. Ivonin; E. P. Naiden; V. I. Yurchenko


Publisher
Springer
Year
2007
Tongue
English
Weight
442 KB
Volume
50
Category
Article
ISSN
1573-9228

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A mathematical model to describe processes occurring during the irradiation of semiconductor materials with high power pulsed ion beams is proposed. The model takes account of recombination between vacancies and interstitial atoms and the formation of defect complexes and these processes are analyse