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Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

✍ Scribed by Ugolini, C.; Nepal, N.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

Book ID: 121686453
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 240 KB
Volume: 89
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2361196

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