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Er3+ion electroluminescence ofp+-Si/n-Si: Er/n+-Si diode structure under breakdown conditions

✍ Scribed by V. B. Shmagin; D. Yu. Remizov; S. V. Obolenskii; D. I. Kryzhkov; M. N. Drozdov; Z. F. Krasil’nik


Book ID
110140965
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
58 KB
Volume
47
Category
Article
ISSN
1063-7834

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## Abstract Er‐doped ZnO/Si hetero‐junctions have been formed by laser ablating an Er‐contained ZnO target onto p‐Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 µm emissions at room temperature. A light e