Equivalent circuit and capacitance of double barrier resonant tunneling diode
โ Scribed by Wei, T.; Stapleton, S.; Berolo, E.
- Book ID
- 118185574
- Publisher
- American Institute of Physics
- Year
- 1993
- Tongue
- English
- Weight
- 959 KB
- Volume
- 73
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.353345
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๐ SIMILAR VOLUMES
The effects of the quantum inductance, due to the resonance lifetime of an electron in a double barrier potential, are studied in the equivalent circuit model of a resonant tunneling diode Regions of stable and unstable circuit behavior are obtained through a small signal analysis, and phase diagram
We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu